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STTH10002TV2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STTH10002TV2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISUM6122 eq STTH10002TV2 Ultrafast Recovery Diode www.iscsemi.com 1 DESCRIPTION · Very Low Forward Losses · Low Recovery Time · High Surge Current Capability · Insulated Package APPLICATIONS · Welding Equipment · High Power Industrial application · Power Converters ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VRSM Max. non-repetitive reverse blocking voltage,TVJ=25℃ 200 V VRRM Max. repetitive reverse blocking voltage,TVJ=25℃ 200 V IF(RMS) Forward rms current, PER diode 150 A IF(AV) Forward voltage drop,TC=45℃ Per Diode TC= 100℃ 50 A Per Device TC= 95℃ IFSM Max. forward surge current,t = 10 ms sinusoidal 750 A Rth j-c Thermal Resistance,Junction to Case, Per Diode 1.0 ℃ /W Thermal Resistance,Junction to Case total 0.55 ℃ /W TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ SOT-227 package K2 A1 11 K1 A2 A1 11 K2 K1 A2 |
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