9 Thermal Information

THERMAL METRIC

(1)

ISO7710-Q1

UNIT

DW (SOIC)

D(SOIC)

(16-Pin)

(8-Pin)

RθJA

Junction-to-ambient thermal resistance

94.4

146.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

57.3

63.1

°C/W

RθJB

Junction-to-board thermal resistance

57.1

80.0

°C/W

ψJT

Junction-to-top characterization parameter

40.0

9.6

°C/W

ψJB

Junction-to-board characterization parameter

56.8

79.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics

application note

10 Power Ratings

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ISO7710-Q1

PD

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 50-MHz 50% duty cycle

square wave

55

mW

PD1

Maximum power dissipation (side-1)

13

mW

PD2

Maximum power dissipation (side-2)

42

mW

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ISO7710-Q1

SLLSEU2C – MARCH 2017 – REVISED DECEMBER 2024

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