5

OPA818

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SBOS940A – MAY 2019 – REVISED MARCH 2020

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Copyright © 2019–2020, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Long-term continuous current for electromigration limits.

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted).

(1)

MIN

MAX

UNIT

Voltage

Supply voltage, (VS+) – (VS–)

13.5

V

Differential input voltage

±5

Common-mode input voltage

VS– – 0.5

VS– + 10

Output voltage

VS– – 0.5

VS+ + 0.5

Current

Continuous input current

±10

mA

Continuous output current(2)

25

Continuous current in feedback pin(2)

13

Temperature

Junction, TJ

125

°C

Operating free-air, TA

–40

85

Storage, Tstg

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD) Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, allpins(1)

±2500

V

Charged device model (CDM), per JEDEC specificationJESD22-C101, all pins(2)

±1000

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted).

MIN

NOM

MAX

UNIT

VS

Single-supply voltage

6

10

13

V

TA

Ambient temperature

–40

25

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

OPA818

UNIT

DRG (SON)

8 PINS

RθJA

Junction-to-ambient thermal resistance

54.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

56.0

°C/W

RθJB

Junction-to-board thermal resistance

27.2

°C/W

ΨJT

Junction-to-top characterization parameter

1.8

°C/W

ΨJB

Junction-to-board characterization parameter

27.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

11.1

°C/W