IRF730 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	IRF730

Description	N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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IRF730

N - CHANNEL 400V - 0.75

Ω - 5.5A - TO-220

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.75

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

August 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

400

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

400

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

o C5.5

A

ID

Drain Current (continuous) at Tc =100

oC3.5

A

IDM(

•)

Drain Current (pulsed)

22

A

Ptot

Tot al Dissipation at Tc =25

oC100

W

Derating F act or

0.8

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.0

V/ ns

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤5.5 A, di/dt ≤ 90 Α/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

TYPE

VDSS

RDS(on)

ID

IRF730

400 V

< 1

Ω

5.5 A

1

2

3

TO-220

1/8

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