IRF730 datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

td(on)

Turn-on Time

Rise Time

VDD =200 V

ID =3.5 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 1)

11. 5

7.5

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =320 V

ID =5.5 A VGS =10 V

7.3

8.5

SWITCHING OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

tr(Voff)

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =320 V

ID =7 A

RG =4.7

Ω VGS =10 V

(see test circuit, figure 3)

9.5

16. 5

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ISD

ISDM (

•)

Source-drain Current

(pulsed)

5.5

VSD (

∗)

Forward On Voltage

ISD =5. 5 A

VGS =0

1.6

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =7 A

di/dt = 100 A/

µs

VDD =100 V

Tj =150

(see test circuit, figure 3)

300

13. 7

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

IRF730

3/8

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