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FPD3000 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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FPD3000 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
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1 / 3 page  2W POWER PHEMT Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com 1 Datasheet v3.0 FPD3000 FEATURES: • 32.5 dBm Linear O/p Power at 12 GHz • 6.5 dB Power Gain at 12 GHz • 8 dB Maximum Stable Gain at 12 GHz • 42 dBm Output IP3 • 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD3000 is also available in the low cost plastic SOT89 package. ELECTRICAL SPECIFICATIONS 1: LAYOUT: TYPICAL APPLICATIONS: • Narrowband and broadband high- performance amplifiers • SATCOM uplink transmitters • PCS/Cellular low-voltage high-efficiency output amplifiers • Medium-haul digital radio transmitters PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power at 1dB Gain Compression P1dB VDS = 8 V; IDS = 50% IDSS 31.5 32.5 dBm Maximum Stable Gain (S21/S12) SSG VDS = 8 V; IDS = 50% IDSS 7.0 8.0 dB Power Gain at P1dB G1dB VDS = 8 V; IDS = 50% IDSS 6.0 6.5 dB Power-Added Efficiency PAE VDS = 8 V; IDS = 50% IDSS; POUT = P1dB 30 % Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) IP3 VDS = 8V; IDS = 50% IDSS Matched for optimal power Tuned for best IP3 42 44 dBm dBm Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 750 930 1100 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 1.5 A Transconductance GM VDS = 1.3 V; VGS = 0 V 800 mS Gate-Source Leakage Current IGSO VGS = -5 V 10 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 3 mA 1.0 V Gate-Source Breakdown Voltage |VBDGS| IGS = 3 mA 12.0 14.0 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 3 mA 14.5 16.0 V Thermal Resistivity (see Notes) θJC VDS > 6V 20 °C/W Note: 1 T Ambient = 22°C; RF specifications measured at f = 12 GHz using CW signal |
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