5 / 8 page
5 of 8
RF5198
Rev A5 DS060310
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Application Schematic
Circuit Optimization for Various Output Power Requirements
Output Power (dBm)
Matching Component
Sample Part Number
Typical Efficiency (%)
28
12nH
LQG15HN12NJ02D (Murata)
41
27.5
N/A
42
26.5
0.5pF
GRM1555C1HR50BZ01E (Murata)
42
26
1.0pF
GRM1555C1H1R0BZ01E (Murata)
42
25
1.5pF
GRM1555C1H1R5BZ01E (Murata)
41
1 nF
VREG
VMODE
1 nF
1 nF
10
μF
VCC
1 nF
RF IN
RF OUT/
ZLOAD
Place the 1 nF capacitor next
to RF5198 with minimal trace
length to the PA.
VCC BIAS
The 8.2nH inductor may be
required for isolation of VCC1
and VCC2 depending on layout.
VCC BIAS may be connected
to VCC; however, VCC must be
maintained above 1.5 V.
NOTE:
Additional averaging or lowpass filtering is required on this
pin to reduce the voltage ripple due to the W-CDMA
modulation. A lowpass cutoff frequency is selected through
trade-off between acceptable amplitude ripple and rise/fall
time. The 5.1 k
Ω resistor to ground provides a DC return
for the detector temperature compensation circuitry.
RDET
5.1 k
Ω
VDET
16
15
14
13
1
2
3
4
8
7
6
5
9
10
11
12
Bias
IMN
OMN
Interstage MN
Q1
Q2
Integrated
Power
Detector
8.2 nH
Matching
Component
(See Table Below)
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
