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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
]
RF IN
RF OUT
VMODE
GND
VREG
VCC2
VCC2
VCC2
16
15
14
13
1
2
3
4
8
7
6
5
9
10
11
12
Bias
RF5188
3V 1950MHZ W-CDMA LINEAR POWER
AMPLIFIER MODULE
The RF5188 is a high-power, high-efficiency linear amplifier module specifically
designed for 3V handheld systems. The device is manufactured on an advanced
third generation GaAs HBT process, and was designed for use as the final RF ampli-
fier in 3V W-CDMA handheld digital cellular equipment, spread-spectrum systems,
and other applications in the 1920MHz to 1980MHz band (Band 1). The RF5188
has a digital control line for low power applications to lower quiescent current. The
RF5188 is assembled in at 16-pin, 3mmx3mm, QFN package.
Features
Input/Output Internally
Matched@50
Ω
27.5dBm Linear Output Power
42% Peak Linear Efficiency
28dB Linear Gain
-42dBc ACLR @ ±5MHz
HSDPA Capable
Applications
3V W-CDMA Band 1 Handsets
Multi-Mode W-CDMA 3G Hand-
sets
3V TD-SCDMA Handsets
Spread-Spectrum Systems
RF5188
3V 1950MHz W-CDMA Linear Power Amplifier Module
RF5188PCBA-41X
Fully Assembled Evaluation Board
Rev A4 DS060310
RF51883V
1950MHz W-
CDMA Linear
Power Ampli-
fier Module
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 3 x 3
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