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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
PWR SEN
BIAS GND1
RF IN
NC
PWR REF
RF OUT
RF OUT
RF OUT
16
15
14
13
5
6
7
8
9
10
11
12
4
3
2
1
Bias
RF5117
3V, 1.8GHz TO 2.8GHz
LINEAR POWER AMPLIFIER
The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specif-
ically for battery-powered WLAN applications such as PC cards, mini PCI, and com-
pact flash applications. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed
for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum trans-
mitters. The device is provided in a 3mmx3mm, 16-pin, leadless chip carrier with a
backside ground. The RF5117 is designed to maintain linearity over a wide range of
supply voltage and power output.
Features
Single 3.3V Power Supply
+30dBm Saturated Output
Power
26dB Small Signal Gain
High Linearity
1800MHz to 2800MHz Fre-
quency Range
+17dBm PO, 11G, <3% EVM
Applications
IEEE802.11B WLAN Applications
IEEE802.11G WLAN Applications
2.5GHz ISM Band Applications
Commercial and Consumer Sys-
tems
Portable Battery-Powered Equip-
ment
Spread-Spectrum and MMDS
Systems
RF5117
3V, 1.8GHz to 2.8GHz Linear Power Amplifier
RF5117PCBA-41X
Fully Assembled Evaluation Board
Rev A13 DS071018
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 3 x 3
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