AONS66612

Symbol

Min

Typ

Max

Units

BVDSS

60

V

VDS=60V, VGS=0V

1

TJ=55°C

5

IGSS

±100

nA

VGS(th)

Gate Threshold Voltage

2.3

2.85

3.5

V

1.4

1.65

TJ=125°C

2.25

2.7

2.0

2.5

mΩ

gFS

100

S

VSD

0.67

1

V

IS

120

A

Ciss

5300

pF

Coss

1500

pF

Crss

50

pF

Rg

0.4

0.9

1.4

Ω

Qg(10V)

78

110

nC

Qgs

20

nC

Qgd

20

nC

Qoss

Output Charge

VGS=0V, VDS=30V

92

nC

tD(on)

18

ns

tr

10

ns

tD(off)

40

ns

tf

13

ns

trr

30

ns

Qrr

135

nC

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT

ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE

CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY

OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,

INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:

http://www.aosmd.com/terms_and_conditions_of_sale

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=20A, di/dt=500A/ms

Turn-Off DelayTime

Turn-Off Fall Time

VGS=10V, VDS=30V, RL=1.5W,

RGEN=3W

IF=20A, di/dt=500A/ms

Turn-On Rise Time

Gate Source Charge

Gate Drain Charge

SWITCHING PARAMETERS

m

Ω

Gate-Body leakage current

RDS(ON)

IS=1A, VGS=0V

VDS=VGS, ID=250mA

VGS=6V, ID=20A

Forward Transconductance

VDS=5V, ID=20A

Static Drain-Source On-Resistance

Turn-On DelayTime

Maximum Body-Diode Continuous Current

Input Capacitance

Diode Forward Voltage

DYNAMIC PARAMETERS

Reverse Transfer Capacitance

VGS=0V, VDS=30V, f=1MHz

Output Capacitance

Gate resistance

VGS=10V, VDS=30V, ID=20A

Total Gate Charge

f=1MHz

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

μA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

ID=250mA, VGS=0V

VDS=0V, VGS=±20V

VGS=10V, ID=20A

A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power

dissipation P

DSM is based on R

qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on

the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T

J(MAX)=150°C.

D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev.2.1: April 2023

www.aosmd.com

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