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RF2361
Rev A10 DS070731
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage, VCC
-0.5 to +8.0
V
DC
Power Down Voltage, VPD
<VCC
VDC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
RF Frequency Range
150 to 2500
MHz
Low Noise Amplifier
881MHz Performance
Schematic per LNA Application;
T=25°C, RF=881MHz, VPD=2.8V,
R1=1k
Ω
Gain
19.5
20
dB
V
CC = 3.0V, ICC =7.6 mA
19.5
20
dB
V
CC = 2.7V, ICC =7.5 mA
Noise Figure
1.4
1.6
dB
V
CC = 3.0V, ICC =7.6 mA
1.4
1.6
dB
V
CC = 2.7V, ICC =7.5 mA
Input IP3
+6.0
dBm
V
CC = 3.0V, ICC =7.6 mA
+5.5
dBm
V
CC = 2.7V, ICC =7.5 mA
Low Noise Amplifier
1950MHz Performance
Schematic per LNA Application;
T=25°C, RF=1950MHz, VPD=2.8V, R1=1kΩ
Gain
12.5
13
dB
V
CC = 3.0V, ICC =6.4 mA
12.5
13
dB
V
CC = 2.7V, ICC =6.3 mA
Noise Figure
1.3
1.5
dB
V
CC = 3.0V, ICC =6.4 mA
1.3
1.5
dB
V
CC = 2.7V, ICC =6.3 mA
Input IP3
+16.5
dBm
V
CC = 3.0V, ICC =6.4 mA
+16.0
dBm
V
CC = 2.7V, ICC =6.3 mA
Driver Amplifier
836MHz Performance
Schematic per Driver Amplifier Application;
T=25°C, RF=836MHz, V
PD =2.8 V
Gain
19.5
20.5
21.5
dB
V
CC =3.5V
19.5
20.5
21.5
dB
V
CC =3.0 V
19.5
20.5
21.5
dB
V
CC =2.7 V
Output IP3
25
+32.0
35
dBm
V
CC =3.5 V
+29.0
dBm
V
CC =3.0 V
+27.8
dBm
V
CC =2.7 V
Noise Figure
1.9
2.0
dB
V
CC =3.5 V
1.85
2.0
dB
V
CC =3.0 V
1.8
2.0
dB
V
CC =2.7 V
Reverse Isolation
25
dB
V
CC =3.5 V
25
dB
V
CC =3.0 V
25
dB
V
CC =2.7 V
Input VSWR
1.8:1
2.0:1
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
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