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DS1972 Datasheet(PDF) 23 Page - Maxim Integrated Products |
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DS1972 Datasheet(HTML) 23 Page - Maxim Integrated Products |
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23 / 23 page ![]() 1024-Bit EEPROM iButton Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 23 © 2012 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc. Revision History REVISION NUMBER REVISION DATE DESCRIPTION PAGES CHANGED 0 4/06 Initial release — 1 8/06 UL#913 bullet changed from “Meets UL#93 (4th Edit.). . .(Application Pending)” to “Designed to meet UL#93 (4th Edit.). . .” 1, 2 Deleted UL#913 bullet from the Common iButton Features section. 1 2 8/09 Changed the RoHS packages to lead(Pb)-free packages in the Ordering Information table. 1 Changed VTLMIN from 0.46V to 0.5V in the Electrical Characteristics table. 2 In the Absolute Maximum Ratings, changed storage temp to -55°C to +125°C; in the Electrical Characteristics table, changed VTH, VTL based on VPUP and data retention to 40 years min at 85°C; added note to retention spec: “EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-term storage at elevated temperatures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C.” 2, 3 In the Electrical Characteristics table, changed the VILMAX spec from 0.3V to 0.5V; removed from the tW1LMAX spec; added Note 17 to tW0L spec; updated EC table Notes 17 and 18; corrected Note 20. 2, 3 Added to Figure 11 Write-Zero Time Slot. 18 Added Package Information table. 22 3 4/10 Created newer template-style data sheet. All 4 1/12 Updated Note 1 in the Electrical Characteristics section; specified the data memory default status and added a note that the memory must be programmed to FFh for the EPROM mode to function to the Memory Access section. 3, 7, 8 |
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