5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MIN

MAX

UNIT

Peak Pulse (2) (3)

IEC 61000-4-5 power (tp - 8/20 µs)

57

W

IEC 61000-4-5 Current (tp - 8/20 µs)

6

A

TA

Ambient Operating Temperature

-55

150

°C

Tstg

Storage Temperature

-65

155

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not

sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality,

performance, and shorten the device lifetime.

(2)

Voltages are with respect to GND unless otherwise noted.

(3)

Measured at 25

℃

5.2 ESD Ratings—JEDEC Specification

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/

JEDEC JS-001 (1)

±2500

V

Charged device model (CDM), per JEDEC

specification JS-002 (2)

±1000

V

(1)

JEDEC document JEP155 states that 500V HBM allows safe manufactuuring with a standard ESD control proccess.

(2)

JEDEC document JEP157 states that 250V CDM allows safe manufactuuring with a standard ESD control proccess.

5.3 ESD Ratings—IEC Specification

VALUE

UNIT

V(ESD)

Electrostatic discharge

IEC 61000-4-2 contact discharge

±30000

V

IEC 61000-4-2 air-gap discharge

±30000

5.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIO

Input pin voltage

IO to GND

-5.5

5.5

V

TA

Operating free-air temperature

-55

150

°C

5.5 Thermal Information

THERMAL METRIC (1)

ESD451

UNIT

DPL (DFN0603)

DPY (DFN1006)

2 PINS

2 PINS

RθJA

Junction-to-ambient thermal resistance

356.9

305.0

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

201.2

179.5

°C/W

RθJB

Junction-to-board thermal resistance

136.4

121.4

°C/W

ΨJT

Junction-to-top characterization parameter

2.6

16.5

°C/W

ΨJB

Junction-to-board characterization parameter

135.9

120.3

°C/W

ESD451

SLVSH27B – APRIL 2023 – REVISED DECEMBER 2025

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