Potens semiconductor corp.

Ver.1.01

2

PDC02P15Z

150V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-150

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.12

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=-150V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-120V , VGS=0V , TJ=125℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-1A

---

650

780

˙

m



VGS=-6V , ID=-0.5A

---

700

950

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-2

-3

-4

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-5.81

---

mV/℃

gfs

Forward Transconductance

VDS=-10V , ID=-1A

---

2

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=-75V , VGS=10V , ID=-1A

---

4.4

8

nC

Qgs

Gate-Source Charge3 , 4

---

0.7

2

Qgd

Gate-Drain Charge3 , 4

---

1.5

3

Td(on)

Turn-On Delay Time3 , 4

VDD=-75V , VGS=-10V , RG=10



ID=-1A

---

12.5

20

ns

Tr

Rise Time3 , 4

---

8.9

18

Td(off)

Turn-Off Delay Time3 , 4

---

17.3

36

Tf

Fall Time3 , 4

---

11.5

24

Ciss

Input Capacitance

VDS=-75V , VGS=0V , F=1MHz

---

403

810

pF

Coss

Output Capacitance

---

31

65

Crss

Reverse Transfer Capacitance

---

18

40

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

30

60



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-2

A

ISM

Pulsed Source Current

---

---

-4

A

VSD

Diode Forward Voltage

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

trr

Reverse Recovery Time

VGS=0V,IS=1A , di/dt=100A/µs

TJ=25℃

---

70

---

ns

Qrr

Reverse Recovery Charge

---

114

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=50V,VGS=10V,L=1mH,IAS=4.8A.,RG=25,Starting TJ=25℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings