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GD32H757VMT7 Datasheet(PDF) 109 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32H757VMT7 Datasheet(HTML) 109 Page - GigaDevice Semiconductor (Beijing) Inc. |
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109 / 151 page ![]() GD32H757xx Datasheet 108 Symbol Parameter Conditions Min Typ Max Unit 1.8 V ≤ VDDA ≤ 2.4 V 1.8 V ≤ VREFP ≤ VDDA fADC = 36 MHz SMP = 3.5 — — 2.25 Resolution = 10 bits 2.7 V ≤ VDDA ≤ 3.6 V 2.7 V ≤ VREFP ≤ VDDA fADC = 72 MHz SMP = 3.5 — — 5.14 2.4 V ≤ VDDA ≤ 2.7 V 2.4 V ≤ VREFP ≤ VDDA fADC = 54 MHz SMP = 3.5 — — 3.85 1.8 V ≤ VDDA ≤ 2.4 V 1.8 V ≤ VREFP ≤ VDDA fADC = 36 MHz SMP = 3.5 — — 2.57 Resolution = 8 bits 2.7 V ≤ VDDA ≤ 3.6 V 2.7 V ≤ VREFP ≤ VDDA fADC = 72 MHz SMP = 3.5 — — 6 2.4 V ≤ VDDA ≤ 2.7 V 2.4 V ≤ VREFP ≤ VDDA fADC = 54 MHz SMP = 3.5 — — 4.5 1.8 V ≤ VDDA ≤ 2.4 V 1.8 V ≤ VREFP ≤ VDDA fADC = 36 MHz SMP = 3.5 — — 3 tTRIG(1) External trigger period Resolution = 14 bits — — 18 1/ fADC VAIN(1) Conversion voltage range — 0 — VREFP V VCMIV(1) Common mode input voltage — VREFP/ 2- 10% VREFP/ 2 VREFP/ 2+10 % V RAIN(1) External input impedance Resolution = 14 bits — — 84.4 k Ω Resolution = 12 bits — — 96.5 Resolution = 10 bits — — 112 Resolution = 8 bits — — 135 RADC(1) Internal resistance — 150 — Ω CADC(1) Input sampling capacitance — — 12 — pF tSTAB ADC Power-up time — 1 — — μs tCAL(1) Offset and linearity calibration time — TBD 1/fADC tOFF_ CAL(1) Offset calibration time — TBD 1/fADC ts(1) Sampling time — 3.5 — 810.5 1/fADC tCONV(1) Total conversion time (including sampling time) Resolution = N bits N+4 — — 1/fADC (1) Value guaranteed by design, not 100% tested in production. (2) Depending on the package, VREFP can be internally connected to VDDA and VREFN to VSSA. (3) VREFP should always be equal to or less than VDDA, especially during power up. |
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