2 / 6 page
CY24713
Document #: 38-07396 Rev. **
Page 2 of 6
Notes:
1. Float XOUT if XIN is externally driven.
2. Rated for 10 years
Pin Description
Name
Number
Description
XIN
1
Reference Crystal Input
VDD
2
3.3V Voltage Supply
VCXO
3
Input Analog Control for VCXO
VSS
4
Ground
CLK_B
5
13.5-MHz Clock Output
CLK_A
6
4.9152-MHz Clock Output
CLK_C
7
27-MHz Clock Output
XOUT[1]
8
Reference Crystal Output
Absolute Maximum Conditions
Parameter
Description
Min.
Max.
Unit
VDD
Supply Voltage
–0.5
7.0
V
TS
Storage Temperature[2]
–65
125
°C
TJ
Junction Temperature
–
125
°C
Digital Inputs
VSS – 0.3
VDD + 0.3
V
Digital Outputs referred to VDD
VSS – 0.3
VDD + 0.3
V
Electrostatic Discharge
–
2000
V
Analog Input
–0.5
7.0
V
Pullable Crystal Specifications
Parameter
Description
Condition
Min.
Typ.
Max.
Unit
FNOM
Nominal crystal frequency
Parallel resonance, funda-
mental mode, AT cut
–27
–
MHz
CLNOM
Nominal load capacitance
–
14
–
pF
R1
Equivalent series resistance (ESR)
Fundamental mode
–
–
25
Ω
R3/R1
Ratio of third overtone mode ESR to fundamen-
tal mode ESR
Ratio used because typical
R1 values are much less
than the maximum spec.
3––
DL
Crystal drive level
No external series resistor
assumed
–0.5
2.0
mW
F3SEPHI
Third overtone separation from 3*FNOM
High side
300
–
–
ppm
F3SEPLO
Third overtone separation from 3*FNOM
Low side
–
–
–150
ppm
C0
Crystal shunt capacitance
–
–
7
pF
C0/C1
Ratio of shunt to motional capacitance
180
–
250
C1
Crystal motional capacitance
14.4
18
21.6
pF
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