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PDD0906 Datasheet(PDF) 3 Page - Potens Semiconductor Corp. |
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PDD0906 Datasheet(HTML) 3 Page - Potens Semiconductor Corp. |
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3 / 5 page ![]() Potens semiconductor corp. Ver.1.01 3 PDD0906 100V N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC TC , Case Temperature (℃) Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ TJ , Junction Temperature (℃) Fig.4 Gate Charge Characteristics Fig.5 Normalized Transient Impedance Qg , Gate Charge (nC) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Square Wave Pulse Duration (s) |
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