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PDF02N150 Datasheet(PDF) 1 Page - Potens Semiconductor Corp.

Part # PDF02N150
Description  1500V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  POTENS [Potens Semiconductor Corp.]
Direct Link  http://potens-semi.com/en/
Logo POTENS - Potens Semiconductor Corp.

PDF02N150 Datasheet(HTML) 1 Page - Potens Semiconductor Corp.

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Potens semiconductor corp.
Ver.1.01
1
PDF02N150
1500V N-Channel MOSFETs
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
1500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current
– Continuous (TC=25℃)
2.5
A
Drain Current
– Continuous (TC=100℃)
1.6
A
IDM
Drain Current
– Pulsed1
10
A
EAS
Single Pulse Avalanche Energy2
36.5
mJ
IAS
Single Pulse Avalanche Current2
2.7
A
PD
Power Dissipation (TC=25℃)
100
W
Power Dissipation
– Derate above 25℃
0.8
W/℃
TSTG
Storage Temperature Range
-50 to 150
℃
TJ
Operating Junction Temperature Range
-50 to 150
℃
BVDSS
RDSON
ID
1500V
10
2.5A
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to ambient
---
62
℃/W
RθJC
Thermal Resistance Junction to Case
---
1.25
℃/W
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
 1500V,2.5A, RDS(ON) =10
Ω@VGS = 10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available
General Description
Features
Applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
TO220F Pin Configuration
D
G
S
G
 Networking
 Load Switch
 LED applications
 Quick Charger
D
S


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