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PDF02N150 Datasheet(PDF) 2 Page - Potens Semiconductor Corp.

Part # PDF02N150
Description  1500V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  POTENS [Potens Semiconductor Corp.]
Direct Link  http://potens-semi.com/en/
Logo POTENS - Potens Semiconductor Corp.

PDF02N150 Datasheet(HTML) 2 Page - Potens Semiconductor Corp.

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Potens semiconductor corp.
Ver.1.01
2
PDF02N150
1500V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
1500
---
---
V
IDSS
Drain-Source Leakage Current
VDS=1200V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=960V , VGS=0V , TJ=85℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±30V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=1A
---
7
10
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
2
3.2
5
V
gfs
Forward Transconductance
VDS=10V , ID=1A
---
1
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=100V , VGS=10V , ID=1A
---
41
82
nC
Qgs
Gate-Source Charge3 , 4
---
12
24
Qgd
Gate-Drain Charge3 , 4
---
12.4
25
Td(on)
Turn-On Delay Time3 , 4
VDD=100V , VGS=10V , RG=6
ID=1A
---
38
70
ns
Tr
Rise Time3 , 4
---
32
65
Td(off)
Turn-Off Delay Time3 , 4
---
48
95
Tf
Fall Time3 , 4
---
45
90
Ciss
Input Capacitance
VDS=100V , VGS=0V , F=1MHz
---
1150
2300
pF
Coss
Output Capacitance
---
50
100
Crss
Reverse Transfer Capacitance
---
23
46
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
5.6
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
2.5
A
ISM
Pulsed Source Current
---
---
5
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
VGS=0V,IS=2A , di/dt=100A/µs
TJ=25℃
---
1.83
---
uS
Qrr
Reverse Recovery Charge
---
48.7
---
uC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=100V,VGS=10V,L=10mH,IAS=2.7A.,RG=25,Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (T
J=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings



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