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M25PE10-VMP6TP Datasheet(PDF) 14 Page - Numonyx B.V

Part # M25PE10-VMP6TP
Description  1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
PDF  64 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M25PE10-VMP6TP Datasheet(HTML) 14 Page - Numonyx B.V

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Operating features
M25PE20, M25PE10
14/64
All other instructions are ignored while the device is in the Deep Power-down mode. This
can be used as an extra software protection mechanism, when the device is not in active
use, to protect the device from inadvertent Write, Program or Erase instructions.
4.7
Status Register
The Status Register contains two status bits that can be read by the Read Status Register
(RDSR) instruction. See Section 6.4: Read Status Register (RDSR) for a detailed
description of the Status Register bits.
4.8
Protection modes
The environments where non-volatile memory devices are used can be very noisy. No SPI
device can operate correctly in the presence of excessive noise. To help combat this, the
M25PE10 and M25PE20 feature the following data protection mechanisms:
4.8.1
Protocol-related protections
●
Power On Reset and an internal timer (tPUW) can provide protection against inadvertent
changes while the power supply is outside the operating specification
●
Program, Erase and Write instructions are checked that they consist of a number of
clock pulses that is a multiple of eight, before they are accepted for execution
●
All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
–Power-up
–
Reset (RESET) driven Low
–
Write Disable (WRDI) instruction completion
–
Page Write (PW) instruction completion
–
Page Program (PP) instruction completion
–
Write to Lock Register (WRLR) instruction completion
–
Page Erase (PE) instruction completion
–
SubSector Erase (SSE) instruction completion
–
Sector Erase (SE) instruction completion
–
Bulk Erase (BE) instruction completion
●
The Reset (Reset) signal can be driven Low to freeze and reset the internal logic. For
the specific cases of Program and Write cycles, the designer should refer to
Section 6.5: Write Status Register (WRSR), Section 6.9: Page Write (PW),
Section 6.10: Page Program (PP), Section 6.12: Page Erase (PE), Section 6.14: Sector
Erase (SE), and Section 6.13: SubSector Erase (SSE), and to Table 14: Device status
after a Reset Low pulse
●
In addition to the low power consumption feature, the Deep Power-down mode offers
extra software protection from inadvertent Write, Program and Erase instructions while
the device is not in active use.



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