SB520 - SB5100, Rev. C

2001 Fairchild Semiconductor Corporation

Features

• Metal to silicon rectifier, majority

carrier conduction.

• For use in low voltage, high

frequency inverters free

wheeling, and polarity

protection applications.

• Low power loss, high efficiency.

• High current capability, low V

F.

• High surge capacity.

SB520 - SB5100

Schottky Rectifiers

Absolute Maximum Ratings*

T

A

= 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P

D

Power Dissipation

5.0

W

RθJA

Thermal Resistance, Junction to Ambient

25

°C/W

Symbol

Parameter

Device

Units

520

530

540

550

560

580

5100

VF

Forward Voltage @ 5.0 A

0.55

0.67

0.85

V

I

R

Reverse Current @ rated V

R

T

A = 25°C

0.5

mA

T

A = 100°C

50

25

mA

C

T

Total Capacitance

V

R = 4.0 V, f = 1.0 MHz

500

380

pF

DO-201AD

COLOR BAND DENOTES CATHODE

Thermal Characteristics

Symbol

Parameter

Value

Units

520

530

540

550

560

580

5100

V

RRM

Maximum Repetitive Reverse Voltage

20

30

40

50

60

80

100

V

I

F(AV)

Average Rectified Forward Current

.375 " lead length @ T

A = 75°C

5.0

A

I

FSM

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

150

A

T

stg

Storage Temperature Range

-50 to +150

°C

T

J

Operating Junction Temperature

-50 to +150

°C

• Glass passivated