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AP3N10CI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP3N10CI
Description  100V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP3N10CI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP3N10CI
100V N-Channel Enhancement Mode MOSFET
AP3N10CI REV1.1
永源微電子科技有限公司
Description
The AP3N10CI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 100V ID =2.8A
RDS(ON) < 300mΩ @ VGS=10V (Type：220mΩ)
Application
Atomizer
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP3N10CI
SOT23L
3N10C
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25
℃
Continuous Drain Current, VGS @ 10V1
2.8
A
ID@TA=100
℃
Continuous Drain Current, VGS @ 10V1
1.4
A
IDM
Pulsed Drain Current2
8.8
A
PD@TA=25
℃
Total Power Dissipation3
2.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient 1
125
℃/W
RθJC
Thermal Resistance Junction-Case1
45
℃/W


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