AP3N10CI

100V N-Channel Enhancement Mode MOSFET

AP3N10CI REV1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

100

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=100V, VGS=0V

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

1.5

2.2

V

RDS(on)

Static Drain-Source on-Resistance

note2

VGS=10V, ID=2A

-

220

300

mΩ

VGS=4.5V, ID=1A

-

250

320

Ciss

Input Capacitance

VDS=25V, VGS=0V,

f=1.0MHz

-

321

-

pF

Coss

Output Capacitance

-

21

-

pF

Crss

Reverse Transfer Capacitance

-

15

-

pF

Qg

Total Gate Charge

VDS=30V, ID=2A,

VGS=10V

-

5.3

-

nC

Qgs

Gate-Source Charge

-

1.3

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

1.7

-

nC

td(on)

Turn-on Delay Time

VDS=30V,

ID=1A, RGEN=3Ω,

VGS=10V

-

14

-

ns

tr

Turn-on Rise Time

-

54

-

ns

td(off)

Turn-off Delay Time

-

18

-

ns

tf

Turn-off Fall Time

-

11

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

2.2

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

8.8

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=2.2A

-

-

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.