AP5P03LI datasheet(1/7 Pages) APME

Part #	AP5P03LI

Description	-30V P-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP5P03LI

-30V P-Channel Enhancement Mode MOSFET

AP5P03LI REV1.0

永源微電子科技有限公司

Description

The AP5P03LI uses advanced Trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -30V ID =-5.8A

RDS(ON) < 58mΩ @ VGS=10V (Type：47mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP5P03LI

SOT23-6L

AP5P03LI

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

-30

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ -10V1

-5.8

A

ID@TC=100

℃

Continuous Drain Current, VGS @ -10V1

-2.6

A

IDM

Pulsed Drain Current note1

-16.8

A

PD

Power Dissipation TA = 25

℃

1

W

RθJA

Thermal Resistance, Junction to Ambient

125

℃/W

RθJC

Thermal Resistance from Junction to Ambient2

135

℃/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

℃

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AP5P03LI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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