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HT48E10 Datasheet(PDF) 3 Page - Holtek Semiconductor Inc |
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HT48E10 Datasheet(HTML) 3 Page - Holtek Semiconductor Inc |
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3 / 42 page ![]() Pin Description Pin Name I/O Options Description PA0~PA7 I/O Pull-high* Wake-up Schmitt trigger Input Bidirectional 8-bit input/output port. Each pin can be configured as a wake-up input by options. Software instructions determine the CMOS output or Schmitt trigger input with pull-high resistor (determined by pull-high options). PB0/BZ PB1/BZ PB2~PB7 I/O Pull-high* PB0 or BZ PB1 or BZ Bidirectional 8-bit input/output port. Software instructions determine the CMOS output or Schmitt trigger input with pull-high resistor (determined by pull-high options). The PB0 and PB1 are pin-shared with BZ and BZ, respectively. Once the PB0 or PB1 is selected as buzzer driving outputs, the output signals come from an internal PFD generator (shared with timer/event counter). VSS ¾¾ Negative power supply, ground PC0/INT PC1/TMR PC2 I/O Pull-high* Bidirectional I/O lines. Software instructions determine the CMOS output or Schmitt trigger input with pull-high resistor (determined by 1-bit pull-high op- tions). The external interrupt and timer input are pin-shared with PC0 and PC1, respectively. The external interrupt input is activated on a high to low transition. RES I ¾ Schmitt trigger reset input. Active low. VDD ¾¾ Positive power supply OSC1 OSC2 I O Crystal or RC OSC1and OSC2 are connected to an RC network or Crystal (determined by options) for the internal system clock. In the case of RC operation, OSC2 is the output terminal for 1/4 system clock. Note: ²*² All pull-high resistors are controlled by an option bit. Absolute Maximum Ratings Supply Voltage ...........................VSS -0.3V to VSS+6.0V Storage Temperature ............................ -50°Cto125°C Input Voltage..............................VSS -0.3V to VDD+0.3V Operating Temperature........................... -40°Cto85°C IOL Total ..............................................................150mA IOH Total............................................................ -100mA Total Power Dissipation .....................................500mW Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage ¾ fSYS=4MHz 2.2 ¾ 5.5 V ¾ fSYS=8MHz 3.3 ¾ 5.5 V IDD1 Operating Current (Crystal OSC) 3V No load, fSYS=4MHz ¾ 0.6 1.5 mA 5V ¾ 24 mA IDD2 Operating Current (RC OSC) 3V No load, fSYS=4MHz ¾ 0.8 1.5 mA 5V ¾ 2.5 4 mA IDD3 Operating Current (Crystal OSC, RC OSC) 5V No load, fSYS=8MHz ¾ 48 mA HT48E10 Rev. 1.50 3 October 31, 2006 |
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