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AP25G02NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP25G02NF
Description  20V NP-Channel Enhancement Mode MOSFET
PDF  11 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP25G02NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP25G02NF
20V N+P-Channel Enhancement Mode MOSFET
AP25G02NF RVE1.1
永源微電子科技有限公司
Description
The AP25G02NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =32A
RDS(ON) < 10mΩ @ VGS=4.5V （Type：7.7mΩ）
VDS = -20V ID =-26.8A
RDS(ON) < 20mΩ @ VGS=-4.5V （Type：16.8mΩ）
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP25G02NF
PDFN5*6-8L
AP25G02NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
32
26.8
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
27.4
-22.5
A
IDM
Pulsed Drain Current2
78
-69.1
A
EAS
Single Pulse Avalanche Energy3
150
135
mJ
IAS
Avalanche Current
72
68
A
PD@TC=25℃
Total Power Dissipation4
46
41.3
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
5
℃
/W
2
0
-20
±12
±12


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