Table 2. Thermal Characteristic

Symbol

Parameter

Value

Unit

RJC

Thermal Resistance,Junction-to-Case

1.08

℃

/W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

On/Off States

BVDSS

Drain-Source Breakdown Voltage

VGS=0V ID=250μA

80

V

IDSS

Zero Gate Voltage Drain Current(Tc=25℃)

VDS=80V,VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V,VDS=0V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=250μA

2

4

V

RDS(ON)

Drain-Source On-State Resistance

VGS=10V, ID=40A

6.3

7.45

mΩ

Dynamic Characteristics

gFS

Forward Transconductance

VDS=25V,ID=40A

110

S

Ciss

Input Capacitance

VDS=25V,VGS=0V,

f=1.0MHz

5050

PF

Coss

Output Capacitance

420

PF

Crss

Reverse Transfer Capacitance

370

PF

Qg

Total Gate Charge

VDS=50V,ID=40A,

VGS=10V

106

nC

Qgs

Gate-Source Charge

19

nC

Qgd

Gate-Drain Charge

47.9

nC

Switching Times

td(on)

Turn-on Delay Time

VDD=30V,ID=2A,RL=15Ω

VGS=10V,RG=2.5Ω

15

nS

tr

Turn-on Rise Time

18

nS

td(off)

Turn-Off Delay Time

31

nS

tf

Turn-Off Fall Time

38

nS

Source-Drain Diode Characteristics

ISD

Source-drain Current(Body Diode)

92

A

ISDM

Pulsed Source-Drain Current(Body Diode)

368

A

VSD

Forward On Voltage(Note 1)

TJ=25℃,ISD=40A,VGS=0V

0.8

0.95

V

trr

Reverse Recovery Time(Note 1)

TJ=25℃,IF=75A

di/dt=100A/μs

56

nS

Qrr

Reverse Recovery Charge(Note 1)

113

nC

Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃

FNK75N08

3

FNK-Semiconductor

Oct.2016.Rev.1.0

2/7