N-Channel Trench Power MOSFET

General Description

The

is N-channel MOS Field Effect Transistor

designed for high current switching applications. Rugged

EAS capability and ultra low RDS(ON) is suitable for PWM,

load switching especially for E-Bike controller applications.

Features

●

VDS=80V; ID=92A

RDS(ON)<7.45mΩ @ VGS=10V

●

Special Designed for E-Bike Controller Application

●

Ultra Low On-Resistance

●

High UIS and UIS 100% Test

Application

●

64V E-Bike Controller Applications

●

Hard Switched and High Frequency Circuits

●

Uninterruptible Power Supply

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

TO-220

-

-

-

Table 1. Absolute Maximum Ratings (TA=25℃)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage (

VGS=0V)

80

V

VGS

Gate-Source Voltage (

VDS=0V)

±

25

V

ID (DC)

Drain Current (DC) at Tc=25℃

92

A

ID (DC)

Drain Current (DC) at Tc=100℃

64.4

A

IDM (pluse)

Drain Current-Continuous@ Current-Pulsed (Note 1)

368

A

dv/dt

Peak Diode Recovery Voltage

30

V/ns

PD

Maximum Power Dissipation(Tc=25℃)

139

W

Derating Factor

0.93

W/℃

EAS

Single Pulse Avalanche Energy (Note 2)

210

mJ

TJ,TSTG

Operating Junction and Storage Temperature Range

-55 To 175

℃

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2.EAS condition:TJ=25℃,VDD=40V,VG=10V,RG=25Ω

Schematic Diagram

To-220 Top View

FNK75N08

FNK75N08

FNK75N08

FNK75N08

FNK-Semiconductor

Oct.2016.Rev.1.0

1/7