Document Number: 94660

For technical questions, contact: diodestech@vishay.com

www.vishay.com

Revision: 29-Jul-09

1

High Performance Schottky

Generation 5.0, 2 x 20 A

40CPT080-F

Vishay High Power Products

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Optimized VF vs. IR trade off for high efficiency

• Increased ruggedness for reverse avalanche capability

• RBSOA available

• Negligible switching losses

• Submicron trench technology

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

APPLICATIONS

• High efficiency SMPS

• Automotive

• High frequency switching

• Output rectification

• Reverse battery protection

• Freewheeling

• DC/DC systems

• Increased power density systems

PRODUCT SUMMARY

IF(AV)

2 x 20 A

VR

80 V

VF at 20 A at 125 °C

0.61 V

Anode

2

13

2

Base

common

cathode

2

Common

cathode

Anode

1

TO-247AC

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

VRRM

80

V

VF

20 Apk, TJ = 125 °C (typical, per leg)

0.585

TJ

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

40CPT080

UNITS

Maximum DC reverse voltage

VR

TJ = 25 °C

80

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average

forward current

per leg

IF(AV)

50 % duty cycle at TC = 156 °C, rectangular waveform

20

A

per device

40

Maximum peak one cycle

non-repetitive surge current per leg

IFSM

5 µs sine or 3 µs rect. pulse

Following any rated load

condition and with rated

VRRM applied

2100

10 ms sine or 6 ms rect. pulse

300

Non-repetitive avalanche energy per leg

EAS

TJ = 25 °C, IAS = 6 A, L = 5.6 mH

101

mJ

Repetitive avalanche current per leg

IAR

Limited by frequency of operation and time pulse duration so

that TJ < TJ max. IAS at TJ max. as a function of time pulse

See fig. 8

IAS at

TJ max.

A