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AP100N06F Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100N06F
Description  60V N-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100N06F Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N06FIPIT
60V N-Channel Enhancement Mode MOSFET
AP100N06F/P/T REV1.0
永源微電子科技有限公司
Description
The AP100N06F/P/T uses advanced APM-SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =100A
RDS(ON) < 5.8mΩ @ VGS=10V （Type：4.8mΩ）
Application
Battery protection
UPS
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N06F
TO-220F-3L
AP100N06F XXX YYYY
1000
AP100N06P
TO-220-3L
AP100N06P XXX YYYY
1000
AP100N06T
TO-263-3L
AP100N06T XXX YYYY
800
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current1,6
100
A
ID@TC=100℃
Continuous Drain Current1,6
54
A
IDM
Pulsed Drain Current2
400
A
EAS
Single Pulse Avalanche Energy3
580
mJ
IAS
Avalanche Current
22
A
PD@TC=25℃
Total Power Dissipation4
78
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
58
℃
/W
RθJC
Thermal Resistance Junction-Case1
1.6
℃
/W


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