AP100N06FIPIT

60V N-Channel Enhancement Mode MOSFET

AP100N06F/P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

60

-

-

V

lGSS

Gate-body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS TJ=25°C

Zero Gate Voltage Drain Current

VDS = 65V, VGS = 0V

1

μA

IDSS TJ=100°C

100

μA

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

2.0

3.0

4.0

V

RDS(on)

Drain-Source On-Resistance4

VGS = 10V, ID = 20A

-

4.8

6.4

mΩ

gfs

Forward Transconductance4

VDS = 10V, ID = 20A

-

58

-

S

Ciss

Input Capacitance

VDS = 30V, VGS =0V,

f =1MHz

-

1230

-

pF

Coss

Output Capacitance

-

470

-

Crss

Reverse Transfer Capacitance

-

22

-

RG

Gate Resistance

f =1MHz

-

1.8

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 30V,

ID= 20A

-

19

-

nC

Qgs

Gate-Source Charge

-

5.4

-

Qgd

Gate-Drain Charge

-

4.9

-

td(on)

Turn-on Delay Time

VGS = 10V, VDD = 30V,

RG = 3Ω, ID = 20A

-

9.5

-

ns

tr

Rise Time

-

5

-

td(off)

Turn-off Delay Time

-

16.5

-

tf

Fall Time

-

6

-

trr

Body Diode Reverse Recovery Time

IF = 20A, di/dt = 100A/μs

-

38

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

30

-

nC

VSD

Diode Forward Voltage4

IS = 20A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

TC=25°C

100

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175

℃ junction temperature

4、EAS condition: TJ=25

℃, VDD=48V, VG=10V, RG=25Ω, L=0.1mH, IAS= 22A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

.