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AP100N08D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100N08D
Description  80V N-Channel Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100N08D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N08D
80V N-Channel Enhancement Mode MOSFET
AP100N08D RVE1.0
永源微電子科技有限公司
Description
The AP100N08D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 80V ID =100A
RDS(ON) < 6.8mΩ VGS=10V （Type：5.5mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N08D
TO-252-3L
AP100N08D XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1,6
100
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1,6
60
A
IDM
Pulsed Drain Current2
400
A
EAS
Single Pulse Avalanche Energy3
506
mJ
PD@TC=25
℃
Total Power Dissipation4
158
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
92
℃/W
RθJC
Thermal Resistance Junction-Case1
1.22
℃
/W


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