AP100N08D

80V N-Channel Enhancement Mode MOSFET

AP100N08D RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

80

92

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=50A

---

5.5

6.8

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

2.0

3.0

4.0

V

IDSS

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=20A

---

75

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

2.0

---

Ω

Qg

Total Gate Charge (10V)

VDS=40V , VGS=10V ,

ID=20A

---

56.6

---

nC

Qgs

Gate-Source Charge

---

21.4

---

Qgd

Gate-Drain Charge

---

12.5

---

Td(on)

Turn-On Delay Time

VDD=40V , VGS=10V ,

RG=3Ω,

ID=20A

---

17.3

---

ns

Tr

Rise Time

---

33

---

Td(off)

Turn-Off Delay Time

---

38.9

---

Tf

Fall Time

---

18.1

---

Ciss

Input Capacitance

VDS=40V , VGS=0V , f=1MHz

---

3475

---

pF

Coss

Output Capacitance

---

770

---

Crss

Reverse Transfer Capacitance

---

25

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

100

A

VSD

Diode Forward Voltage2

VGS=0V , IS=A , TJ=25℃

---

0.9

1.3

V

trr

Reverse Recovery Time

IF=20A , dI/dt=100A/µs ,

TJ=25℃

---

68

---

nS

Qrr

Reverse Recovery Charge

---

66

---

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is VDD

=64VGS=10V,L=0.1mH,IAS=40A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.