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AP85N08BT Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP85N08BT
Description  80V N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP85N08BT Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP85N08BPIT
80V N-Channel Enhancement Mode MOSFET
AP85N08BPIT RVE1.1
永源微電子科技有限公司
Description
The AP85N08BP/T uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 80V ID =85A
RDS(ON) < 8.5mΩ VGS=10V （
Type：6.5mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP85N08BP
TO-220-3L
AP85N08BP XXX YYYY
1000
AP85N08BT
TO-263-3L
AP85N08BT XXX YYYY
800
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage (VGS=0V）
80
V
VGS
Gate-Source Voltage (VDS=0V)
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
85
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
55
A
IDM
Drain Current-Continuous@ Current-Pulsed
300
A
PD@TC=25℃
Maximum Power Dissipation(Tc=25℃)
133
W
EAS
Single pulse avalanche energy
550
mJ
Tstg，Tj
Operation and storage temperature
-55 to 150
℃
RθJC
Thermal Resistance Junction-Case
0.94
℃
/W
RθJA
Thermal Resistance Junction-Ambient
62.5
℃
/W


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