AP85N08BPIT

80V N-Channel Enhancement Mode MOSFET

AP85N08BPIT RVE1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ Max Unit

V(BR)DSS

Drain-source breakdown voltage

VGS=0V, ID=250uA

80

85

V

VGS(th )

Gate threshold voltage

VDS=VGS,ID=250uA Tj=25°C

2.0

3.0

4.0

V

IDSS

Zero gate voltage drain current

VDS=80V,VGS=0V Tj=25°C

-

1

μA

IDSS

Zero gate voltage drain current

VDS=80V,VGS=0V Tj=125°C

- 5

μA

IGSS

Gate-source leakage current

VGS=20V,VDS=0V

-

-

100

nA

RDS(on)

Drain-source on-state resistance

VGS=10V, ID=50A,Tj=25°C

-

6.5

8.5

mΩ

gfs

Transconductance

VDS=5V,ID=50A

-

80

-

S

Ciss

Input Capacitance

VGS=0V, VDS=40V, f=1MHz

-

2948

-

pF

Coss

Output Capacitance

-

354

-

pF

Crss

Reverse Transfer Capacitance

-

198

-

pF

QG

Gate Total Charge

VGS=10V, VDS=40V,ID=50A

-

61

-

nC

Qgs

Gate-Source charge

-

13

-

nC

Qgd

Gate-Drain charge

-

24

-

nC

td(on)

Turn-on delay time

Tj=25°C, VGS=10V, VDS=40V,

RL=3Ω

-

24

-

ns

tr

Rise time

-

15

-

ns

td(off)

Turn-off delay time

-

52

-

ns

tf

Fall time

-

17

-

ns

RG

Gate resistance

VGS=0V, VDS=0V, f=1MHz

-

1.2

-

Ω

VSD

Body Diode Forward Voltage

VGS=0V,ISD=50A

-

0.9

1.2

V

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/μs

-

40

-

ns

Qrr

Body Diode Reverse Recovery Charge

IF=20A, dI/dt=500A/μs

-

61

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is VDD

=64VGS=10V,L=0.1mH,IAS=41A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.