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AP90H06NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP90H06NF
Description  60V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP90H06NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP90H06NF
60V N+N-Channel Enhancement Mode MOSFET
AP90H06NF REV1.0
永源微電子科技有限公司
Description
The AP90H06NF uses advanced APM-SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =100A
RDS(ON) < 4.8mΩ @ VGS=10V （Type：3.8mΩ）
Application
Battery protection
UPS
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP90H06NF
PDFN5*6-8L
AP90H06NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current1,6
90
A
ID@TC=100
℃
Continuous Drain Current1,6
61
A
IDM
Pulsed Drain Current2
380
A
EAS
Single Pulse Avalanche Energy3
80
mJ
IAS
Avalanche Current
40
A
PD@TC=25
℃
Total Power Dissipation4
73.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
51
℃/W
RθJC
Thermal Resistance Junction-Case1
1.7
℃/W


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