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AP110N25MP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP110N25MP
Description  250V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP110N25MP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP110N25MP
250V N-Channel Enhancement Mode MOSFET
AP110N25MP REV1.0
永源微電子科技有限公司
Description
The AP110N25MP uses advanced APM-SGTⅠtechnology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 250V ID =110A
RDS(ON) < 20mΩ @ VGS=10V (Type：18mΩ)
Application
DC/DC Converter
Power Management Switches
BMS/UPS
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP110N25MP
TO-247-3L
AP110N25MP XXX YYYY
360
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V
110
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V
65
A
IDM
Pulsed Drain Current
330
A
EAS
Single Pulse Avalanche Energy
2000
mJ
IAS
Avalanche Current
45
A
PD@TC=25
℃
Total Power Dissipation4
278
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient
0.5
℃/W
RθJC
Thermal Resistance Junction-Case
40
℃
/W


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