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M29W017D Datasheet(PDF) 29 Page - STMicroelectronics

Part # M29W017D
Description  16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
PDF  36 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W017D Datasheet(HTML) 29 Page - STMicroelectronics

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M29W017D
Table 19. CFI Query System Interface Information
Table 20. Device Geometry Definition
Address
Data
Description
Value
1Bh
27h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
36h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
00h
VPP [Programming] Supply Minimum Program/Erase voltage
NA
1Eh
00h
VPP [Programming] Supply Maximum Program/Erase voltage
NA
1Fh
04h
Typical timeout per single byte/word program = 2n µs
16µs
20h
00h
Typical timeout for minimum size write buffer program = 2n µs
NA
21h
0Ah
Typical timeout per individual block erase = 2n ms
1s
22h
00h
Typical timeout for full chip erase = 2n ms
NA
23h
04h
Maximum timeout for byte/word program = 2n times typical
256µs
24h
00h
Maximum timeout for write buffer program = 2n times typical
NA
25h
03h
Maximum timeout per individual block erase = 2n times typical
8s
26h
00h
Maximum timeout for chip erase = 2n times typical
NA
Address
Data
Description
Value
27h
15h
Device Size = 2n in number of bytes
2 MByte
28h
29h
00h
00h
Flash Device Interface Code description
x8
Async.
2Ah
2Bh
00h
00h
Maximum number of bytes in multi-byte program or page = 2n
NA
2Ch
01h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
1
2Dh
2Eh
1Fh
00h
Region 1 Information
Number of identical size erase block = 001Fh+1
32
2Fh
30h
00h
01h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 KByte



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