M29W017D datasheet(5/36 Pages) STMICROELECTRONICS

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M29W017D

SUMMARY DESCRIPTION

The M29W017D is a 16 Mbit (2Mb x8) non-volatile

memory that can be read, erased and repro-

grammed. These operations can be performed us-

ing a single low voltage (2.7 to 3.6V) supply. On

power-up the memory defaults to its Read mode

where it can be read in the same way as a ROM or

EPROM.

The memory is divided into 32 blocks of 64KBytes

(see Table 16, Block Addresses) that can be

erased independently so it is possible to preserve

valid data while old data is erased. Each block can

be protected independently to prevent accidental

Program or Erase commands from modifying the

memory. Program and Erase commands are writ-

ten to the Command Interface of the memory. An

on-chip Program/Erase Controller simplifies the

process of programming or erasing the memory by

taking care of all of the special operations that are

required to update the memory contents. The end

of a program or erase operation can be detected

and any error conditions identified. The command

set required to control the memory is consistent

with JEDEC standards.

Chip Enable, Output Enable and Write Enable sig-

nals control the bus operation of the memory.

They allow simple connection to most micropro-

cessors, often without additional logic.

The memory is offered in TSOP40 (10 x 20mm) and

TFBGA48 (0.8mm pitch) packages. The memory is

supplied with all the bits erased (set to ’1’).

Figure 2. Logic Diagram

Table 1. Signal Names

AI04186

A0-A20

DQ0-DQ7

VCC

M29W017D

VSS

A0-A20

Address Inputs

DQ0-DQ7

Data Inputs/Outputs

Chip Enable

Output Enable

Write Enable

Reset/Block Temporary Unprotect

Ready/Busy Output

VCC

Supply Voltage

VSS

Ground

Not Connected Internally

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