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AP2312AI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP2312AI
Description  20V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP2312AI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP2312AI
20V N-Channel Enhancement Mode MOSFET
AP2312AI RVE1.0
永源微電子科技有限公司
Description
The AP2312AI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =6.8A
RDS(ON) < 18mΩ @ VGS=4.5V (Type：12mΩ)
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP2312AI
SOT23L
AE9T
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±
20
V
ID@TA=25℃
Continuous Drain Current
6.8
A
ID@TA=70℃
Continuous Drain Current
6.0
A
IDM
Pulsed Drain Current2
30
A
PD@TA=25℃
Total Power Dissipation3
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient 1
125
℃
/W
RθJC
Thermal Resistance Junction-ambient 1
85
℃
/W


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