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DIW040F135 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # DIW040F135
Description  Fast Switching IGBTwith Reverse Diode Schnell Schaltender IGBT mit Rückwärtsdiode
PDF  4 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

DIW040F135 Datasheet(HTML) 1 Page - Diotec Semiconductor

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DIW040F135
DIW040F135
Fast Switching IGBTwith Reverse Diode
Schnell Schaltender IGBT mit Rückwärtsdiode
IC
= 40 A
VCEsat
~ 2.1 V
Tjmax
= 175°C
VCES = 1350 V
Ptot = 510 W
Version 2024-05-27
TO-247
SPICE Model & STEP File 1)
Marking
Typ / Type
HS Code 85412900
Typical Applications
Switching frequency 80...100 kHz
Frequency inverters
AC and DC Motor drives
Commercial / industrial grade
Suffix -Q: AEC-Q101 compliant 1)
Suffix -AQ: in AEC-Q101 qualification 1)
Typische Anwendungen
Taktfrequenz 80...100 kHz
Frequenzumrichter
AC- und DC-Motorantriebe
Standardausführung
Suffix -Q: AEC-Q101 konform 1)
Suffix -AQ: in AEC-Q101 Qualifikation 1)
Features
Trench & Fieldstop Technology
Fast switching speed
Medium switching speed
Parallel operation possible
Short circuit proof
Compliant to RoHS (exemp. 7a),
REACH, Conflict Minerals 1)
Besonderheiten
Trench- & Feldstop-Technologie
Niedrige Sättigungsspannung
Schnelle Schaltzeit
Parallelbetrieb möglich
Kurschlussfest
Konform zu RoHS (Ausn. 7a),
REACH, Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Packed in tubes/cardboards
30/450
Verpackt in Stangen/Kartons
Weight approx.
6 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 1)
Grenzwerte 2)
DIW040F135
Collector-Emitter voltage – Kollektor-Emitter-Spannung
VGS = 0 V
VCES
1350 V
Gate-Emitter-voltage continuos – Gate-Emitter-Spannung dauernd
VGES
± 20 V
Power dissipation – Verlustleistung
TC = 25°C 2)
Ptot
510 W
Collector current continous
Kollektorstrom dauernd
TC = 25°C 3)
TC = 100°C 3)
IC
80 A
40 A
Peak Collector current – Kollektor-Spitzenstrom
3)
ICM
160 A
Turn-off Safe Operating Area
Sicherer Arbeitsbereich beim Abschalten
VCE ≤ 1350 V
Tj ≤ 150°C
–
120 A
Diode current continous
Diodenstrom dauernd
TC = 25°C 3)
TC = 100°C 3)
IF
40 A
20 A
Peak diode current
Dioden-Spitzenstrom
VGE = 0 V
tp = 10 ms
IFM
120 A
Short circuit widthstand time
Kurschlussfestigkeit
VCE = 600 V
VGE ≤ 15 V
tSC
10 µs
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55…+175°C
-55...+150°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
1
TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben
2
Measured at heat flange (connector 4) – Gemessen an der Kühlfahne (Anschluss 4)
3
Pulse width limited by Tjmax – Pulsbreite begrenzt durch Tjmax
© Diotec Semiconductor AG
http://www.diotec.com/
1
1
2 3
4
Pb
RoHS
Halogen
FREE


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