LM4040

Absolute Maximum Ratings (Voltages to Anode Unless Otherwise Stated)

Parameter

Rating

Unit

Continuous Reverse Current

20

mA

Continuous Forward Current

10

mA

Operating Junction Temperature

-40 to +150

°C

Storage Temperature

-55 to +150

°C

Caution:

Stresses greater than the Absolute Maximum Ratings specified above, may cause permanent damage to the device. These are stress ratings

only; functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not

implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.

(Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.)

Unless otherwise stated voltages specified are relative to the Anode pin.

Package Thermal Data

Package

θJA

PDIS

TA = +25°C, TJ = +125°C

SOT23

380°C/W

330mW

Recommended Operating Conditions

Parameter

Min

Max

Unit

Reverse Current

0.06

15

mA

Operating Ambient Temperature Range

-40

+125

°C

Electrical Characteristics (Test conditions: TA = +25°C, unless otherwise specified.)

LM4040-25

Symbol

Parameter

Conditions

Typ

LM4040

B Limits

LM4040

C Limits

LM4040

D Limits

Unit

—

TA

VREF

Reverse Breakdown Voltage

IR = 100µA

+25°C

2.5

—

—

—

V

Reverse Breakdown Voltage Tolerance IR = 100µA

+25°C

—

±5

±12

±25

mV

-40 to +85°C

±21

±29

±49

-40 to +125°C

±30

±38

±63

IRMIN

Minimum Operating Current

—

+25°C

45

60

60

65

µA

-40 to +85°C

—

65

65

70

-40 to +125°C

68

68

73

ΔVR/ΔT

Average Reverse Breakdown Voltage

Temperature Coefficient

IR = 10mA

-40 to +125°C

±20

—

—

—

ppm/°C

IR = 1mA

±15

±100

±100

±150

IR = 100µA

±15

—

—

—

ΔVR/ΔIR

Reverse Breakdown Change with

Current

IRMIN ≤ IR

≤ 1mA

+25°C

0.3

0.8

0.8

1.0

mV

-40 to +85°C

—

1.0

1.0

1.2

-40 to +125°C

1.0

1.0

1.2

1mA ≤ IR

≤ 15mA

+25°C

2.5

6.0

6.0

8.0

-40 to +85°C

—

8.0

8.0

10.0

-40 to +125°C

8.0

8.0

10.0

ZR

Dynamic Output Impedance

IR = 1mA, f = 120Hz

IAC = 0.1IR

0.3

0.8

0.9

1.1

Ω

en

Noise Voltage

IR = 100µA

10Hz < f < 10kHz

35

—

—

—

µVRMS

VR

Long Term Stability (Non Cumulative)

t = 1000Hrs, IR = 100µA

120

—

—

—

ppm

VHYST

Thermal Hysteresis

ΔT = -40°C to +125°C

0.08

—

—

—

%

LM4040

Document number: DS33195 Rev. 8 - 2

2 of 16

www.diodes.com

August 2019

© Diodes Incorporated