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TMP320C40 Datasheet(PDF) 22 Page - Texas Instruments |
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TMP320C40 Datasheet(HTML) 22 Page - Texas Instruments |
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22 / 64 page ![]() SMJ320C40, TMP320C40 DIGITAL SIGNAL PROCESSORS SGUS017H − OCTOBER 1993 − REVISED OCTOBER 2001 22 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 325 244 Die Side Number 4 Pad Number One 1 Die Side Number 1 81 Zero-Zero (Origin) 82 162 Die Side Number 2 243 Die Side Number 3 163 Die Designator SMJ320C40 (Rev. 5) Inner Lead Bond (ILB) Information for TAB XXXXX Figure 4. SMJ320C40 Die Numbering Format (See Table 2) The inner lead bond (ILB) pitch for the tape automated bonding (TAB) leadframe is the same as the die bond pad pitch. Table 2 provides a reference for the following: A. The TAB lead numbers. The TAB lead numbers are the same as the die bond pad numbers. B. The C40 signal identities in relation to the pad numbers C. There are 325 bond pad locations, 325 TAB leads, and 324 test pad locations. D. The C40 X-,Y-coordinates, where bond pad 82 serves as the origin, (0,0) E. The inner lead bond pitch (ILB) is the same as the die bond pitch. F. The outer lead pitch is 0.25 ± 0.01 mm. G. The test pad pitch is 0.40 ± 0.01 mm. H. The tape width is 48 mm. I. Outer lead bond (OLB) 18, 19 connect to test pad 18. In addition, the following notes are significant: J. X,Y coordinate data is in microns. K. Average pitch is 126 µm (4.96 mils). L. Smallest pitch value is 126 µm (4.96 mils). M. The active silicon dimensions are 12 424.86 µm × 12035.52 µm (489.16 mils × 473.83 mils). N. The die size is approximately 12 598.40 µm × 12192.00 µm (496.00 mils × 480.00 mils). O. Distance from diced silicon to polyimide support ring is 889 µm (35.0 mils). P. Bond pad dimensions are 108.00 µm × 108.00 µm (4.25 mils × 4.25 mils). Q. Center of bond pad to edge of die minimum (without scribe) = 107.80 µm (4.24 mils). R. The nominal die thickness is 381 ± 50.8 µm (15 ± 2 mils). S. The polyimide encapsulant thickness is approximately 304.8 µm (12 mils). |
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