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STM32F103X8 Datasheet(PDF) 52 Page - STMicroelectronics

Part # STM32F103X8
Description  Performance line, ARM-based 32-bit MCU with Flash, USB, CAN, seven 16-bit timers, two ADCs and nine communication interfaces
PDF  84 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F103X8 Datasheet(HTML) 52 Page - STMicroelectronics

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Electrical characteristics
STM32F103xx
52/84
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE J
1752/3 standard which specifies the test board and the pin loading.
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
●
A supply overvoltage is applied to each power supply pin
●
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 30.
EMI characteristics
Symbol
Parameter
Conditions
Monitored
Frequency Band
Max vs. [fHSE/fHCLK]
Unit
8/48 MHz 8/72 MHz
SEMI
Peak level
VDD = 3.3 V, TA = 2 5 °C,
LQFP100 package
compliant with SAE J
1752/3
0.1 to 30 MHz
12
12
dBµV
30 to 130 MHz
22
19
130 MHz to 1GHz
23
29
SAE EMI Level
4
4
-
Table 31.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum value(1)
1.
Values based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C
conforming to
JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C
conforming to
JESD22-C101
II
500
Table 32.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +105 °C conforming to JESD78A
II level A



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