BB504C datasheet(2/10 Pages) RENESAS

2 / 10 page

BB504C

Rev.6.00 Aug 10, 2005 page 2 of 9

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDS

Gate1 to source voltage

VG1S

–0

Gate2 to source voltage

VG2S

–0

Drain current

Channel power dissipation

Pch

100

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

—

ID = 200

µA, VG1S = VG2S = 0

Gate1 to source breakdown voltage

V(BR)G1SS

—

IG1 = +10

µA, VG2S = VDS = 0

Gate2 to source breakdown voltage

V(BR)G2SS

—

IG2 = +10

µA, VG1S = VDS = 0

Gate1 to source cutoff current

IG1SS

—

+100

VG1S = +5 V, VG2S = VDS = 0

Gate2 to source cutoff current

IG2SS

—

+100

VG2S = +5 V, VG1S = VDS = 0

Gate1 to source cutoff voltage

VG1S(off)

0.6

0.85

1.1

VDS = 5 V, VG2S = 4V

ID = 100

µA

Gate2 to source cutoff voltage

VG2S(off)

0.6

0.85

1.1

VDS = 5 V, VG1S = 5 V

ID = 100

µA

Drain current

ID(op)

VDS = 5 V, VG1 = 5 V

VG2S = 4 V, RG = 120 k

Ω

Forward transfer admittance

|yfs|

VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 120 k

Ω, f = 1 kHz

Input capacitance

Ciss

1.7

2.1

2.5

Output capacitance

Coss

1.0

1.4

1.8

Reverse transfer capacitance

Crss

—

0.027

0.05

VDS = 5 V, VG1 = 5 V

VG2S = 4 V, RG = 120 k

Ω

f = 1 MHz

Power gain (1)

—

Noise figure (1)

—

1.0

1.8

VDS = 5 V, VG1 = 5 V

VG2S = 4 V, RG = 120 k

Ω

f = 200 MHz

Power gain (2)

—

Noise figure (2)

—

1.75

2.3

VDS = 5 V, VG1 = 5 V

VG2S =4 V, RG = 120 k

Ω

f = 900 MHz

BB504C Datasheet(PDF) 2 Page - Renesas Technology Corp

BB504C Datasheet(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL