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點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
DM163
8x3-CHANNEL CONSTANT CURRENT LED DRIVERS
Version: A.004
Page
7
Maximum Ratings (Ta=25°C, Tj(max) = 140°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Voltage
VDD
-0.3 ~ 7.0
V
Input Voltage
VIN
-0.3 ~ VDD+0.3
V
Output Current
IOUT
60
mA
Output Voltage
VOUT
-0.3 ~ 17
V
DCK Frequency
FDCK
20
MHz
GCK Frequency
FGCK
20
MHz
GND Terminal Current
IGND
1440
mA
Power Dissipation
PD
1.36 ( QFP44); 3.63 (QFN40)
(Ta=25
°C)
W
Thermal Resistance
Rth(j-a)
84.42 ( QFP44 ); 31.67 (QFN40)
℃/W
Operating Temperature
Top
-40 ~ 85
℃
Storage Temperature
Tstg
-55 ~ 150
℃
Recommended Operating Condition
DC Characteristics (Ta = 25
°C)
CHARACTERISTIC
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Supply Voltage
VDD
⎯
3
5.5
V
Output Voltage
VOUT
⎯
⎯
⎯
17
V
IO
OUTn
5
⎯
60
IOH
SERIAL-OUT
⎯
⎯
2
Output Current
IOL
SERIAL-OUT
⎯
⎯
-2
mA
VIH
⎯
0.8 VDD
⎯
VDD+0.2
Input Voltage
VIL
⎯
-0.2
⎯
0.2 VDD
V
AC Characteristics (VDD = 5.0 V, Ta = 25°C)
CHARACTERISTIC
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
DCK Frequency
FDCK
Cascade operation
⎯
⎯
20
MHz
DCK pulse duration
twh / twl
High or low level
15
⎯
⎯
ns
DCK rise/fall time
tr / tf
⎯
⎯
⎯
20
ns
GCK Frequency
FGCK
⎯
1
⎯
20
MHz
GCK pulse duration
twh / twl
High or low level
15
⎯
⎯
ns
GCK rise/fall time
tr / tf
⎯
⎯
⎯
20
ns
Set-up Time for SIN
tsetup(D)
Before DCK rising edge
2
⎯
⎯
ns
Hold Time for SIN
thold(D)
After DCK rising edge
3
⎯
⎯
ns
Set-up Time for DCK
tsetup(L)
Before LAT_B falling edge
3
⎯
⎯
ns
LAT_B Pulse Width
tw LAT
⎯
5
⎯
⎯
ns
Set-up Time for LAT_B
Tsetup(G)
Before GCK rising edge
13
⎯
⎯
ns
Set-up Time for SELBK
Tsetup(S)
Before DCK rising edge
5
⎯
⎯
ns
Hold Time for SELBK
Thold(S)
After DCK rising edge
1
⎯
⎯
ns
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