M59DR016CZB datasheet(21/37 Pages) STMICROELECTRONICS

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M59DR016C, M59DR016D

Table 25. Read AC Characteristics

(TA = 0 to 70°C or –40 to 85°C; VDD = VDDQ = 1.65V to 2.2V)

Note: 1. Sampled only, not 100% tested.

2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.

Symbol

Alt

Parameter

Test Condition

M59DR016

Unit

100

120

Min

Max

Min

Max

tAVAV

tRC

Address Valid to Next

Address Valid

E = VIL, G = VIL

100

120

tAVQV

tACC

Address Valid to Output

Valid (Random)

E = VIL, G = VIL

100

120

tAVQV1

tPAGE

Address Valid to Output

Valid (Page)

E = VIL, G = VIL

tELQX

(1)

tLZ

Chip Enable Low to Output

Transition

G = VIL

tELQV

(2)

tCE

Chip Enable Low to Output

Valid

G = VIL

100

120

tGLQX

(1)

tOLZ

Output Enable Low to

Output Transition

E = VIL

tGLQV

(2)

tOE

Output Enable Low to

Output Valid

E = VIL

tEHQX

tOH

Chip Enable High to Output

Transition

G = VIL

tEHQZ

(1)

tHZ

Chip Enable High to Output

Hi-Z

G = VIL

tGHQX

tOH

Output Enable High to

Output Transition

E = VIL

tGHQZ

(1)

tDF

Output Enable High to

Output Hi-Z

E = VIL

tAXQX

tOH

Address Transition to

Output Transition

E = VIL, G = VIL

tPHQ7V1

RP High to Data Valid

(Read Mode)

150

tPHQ7V2

RP High to Data Valid

(Power Down enabled)

µs

tPLQ7V

RP Low to Reset Complete

During Program/Erase

µs

tPLPH

tRP

RP Pulse Width

100

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