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M59MR032D Datasheet(PDF) 15 Page - STMicroelectronics |
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M59MR032D Datasheet(HTML) 15 Page - STMicroelectronics |
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15 / 49 page ![]() 15/49 M59MR032C, M59MR032D – X-Latency (CR13-CR11). These configuration bits define the number of clock cycles elapsing from L going low to valid data available in burst mode. The correspondence between X-Latency settings and the sustainable clock frequencies is given in Table 13 and Figure 5. – Power-down configuration (CR10). The RP pin may be configured to give a very low power consumption when driven low (power-down state). In power-down the ICC supply current is reduced to a typical figure of 2µA; if this function is disabled (default at power-up) the RP pin causes only a reset of the device and the supply current is the stand-by value. The recovery time after a RP pulse is significantly longer (50µs vs. 150ns) when power-down is enabled. – Data hold configuration (CR9). In burst mode this register bit determines if a new data is output at each clock cycle or every 2 clock cy- cles. – Wait configuration (CR8). In burst mode WAIT indicates whether the data on the output bus are valid or a wait state must be inserted. The configuration bit determines if WAIT will be asserted one clock cycle before the wait state or during the wait state (see Figure 10). – Burst order configuration (CR7). See Table 15 for burst order and length. – Clock configuration (CR6). In burst mode de- termines if address is latched and data is output on the rising or falling edge of the clock. – Burst length (CR2-CR0). In burst mode deter- mines the number of words output by the mem- ory. It is possible to have 4 words, 8 words or a Table 15. Burst Order and Length Configuration Starting Address 4 Words 8 Words Continuous Burst Linear Interleaved Linear Interleaved 0 0-1-2-3 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0-1-2-3-4-5... 1 1-2-3-0 1-0-3-2 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 1-2-3-4-5-6... 2 2-3-0-1 2-3-0-1 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 2-3-4-5-6-7... 3 3-0-1-2 3-2-1-0 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 3-4-5-6-7-8... ... 7 7-4-5-6 7-6-5-4 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 7-8-9-10-11... ... 28 28-29-30-31-32... 29 29-30-31-WAIT-32... 30 30-31-WAIT-WAIT-32... 31 31-WAIT-WAIT-WAIT-32... continuous burst mode, in which all the words in bank A or bank B are read sequentially. In con- tinuous burst mode the burst sequence is inter- rupted at the end of each of the two banks or when a suspended block is reached. In continu- ous burst mode it may happen that the memory will stop the data output flow for a few clock cy- cles; this event is signaled by WAIT going low until the output flow is resumed. The initial ad- dress determines if the output delay will occur as well as its duration. If the starting address is aligned to a four word boundary no wait states will be needed. If the starting address is shifted by 1,2 or 3 positions from the four word bound- ary, WAIT will be asserted for 1,2 or 3 clock cy- cles (2,4, 6 cycles if CR9 is set at “1”) when the burst sequence is crossing the first 32 word boundary. WAIT will be asserted only once dur- ing a continuous burst access. See also Table 15. Enter Bypass Mode (EBY) Instruction. This in- struction uses the two Coded cycles followed by one write cycle giving the command 20h to ad- dress 555h for mode set-up. Once in Bypass mode, the device will accept the Exit Bypass (XBY) and Program or Double Word Program in Bypass mode (PGBY, DPGBY) commands. The Bypass mode allows to reduce the overall pro- gramming time when large memory arrays need to be programmed. Exit Bypass Mode (XBY) Instruction. This in- struction uses two write cycles. The first inputs to the memory the command 90h and the second in- puts the Exit Bypass mode confirm (00h). After the XBY instruction, the device resets to Read Memo- ry Array mode. |
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