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M59MR032D Datasheet(PDF) 16 Page - STMicroelectronics |
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M59MR032D Datasheet(HTML) 16 Page - STMicroelectronics |
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16 / 49 page ![]() M59MR032C, M59MR032D 16/49 Program in Bypass Mode (PGBY) Instruc- tion. This instruction uses two write cycles. The Program command A0h is written to any Address on the first cycle and the second write cycle latch- es the Address on the rising edge of L and the Data to be written on the rising edge of W and starts the P/E.C. Read operations within the same bank output the Status Register bits after the pro- gramming has started. Memory programming is made only by writing ’0’ in place of ’1’. The content of the memory cell is not changed if the user write ’1’ in place of ’0’ and no error occurs. Status bits ADQ6 and ADQ7 determine if programming is on- going and ADQ5 allows verification of any possible error. Program (PG) Instruction. This instruction uses four write cycles. The Program command A0h is written to address 555h on the third cycle after two Coded Cycles. A fourth write operation latches the Address and the Data to be written and starts the P/E.C. Read operations within the same bank out- put the Status Register bits after the programming has started. Memory programming is made only by writing ’0’ in place of ’1’. The content of the memory cell is not changed if the user write ’1’ in place of ’0’ and no error occurs. Status bits ADQ6 and ADQ7 determine if programming is on-going and ADQ5 allows verification of any possible error. Programming at an address not in blocks being erased is also possible during erase suspend. Double Word Program (DPG) Instruction. This feature is offered to improve the programming throughput, writing a page of two adjacent words in parallel. High voltage (11.4V to 12.6V) on VPP pin is required. This instruction uses five write cy- cles. The double word program command 40h is written to address 555h on the third cycle after two Coded Cycles. A fourth write cycle latches the ad- dress and data to be written to the first location. A fifth write cycle latches the new data to be written to the second location and starts the P/E.C.. Note that the two locations must have the same address except for the address bit A0. The Double Word Program can be executed in Bypass mode (DPG- BY) to skip the two coded cycles at the beginning of each command. Block Protect (BP), Block Unprotect (BU), Block Lock (BL) Instructions. All blocks are protected and unlocked at power-up. Each block of the array has two levels of protection against program or erase operation. The first level is set by the Block Protect instruction; a protected block cannot be programmed or erased until a Block Un- protect instruction is given for that block. A second level of protection is set by the Block Lock instruc- tion, and requires the use of the WP pin, according to the following scheme: – when WP is at VIH, the Lock status is overridden and all blocks can be protected or unprotected; – when WP is at VIL, Lock status is enabled; the locked blocks are protected, regardless of their previous protect state, and protection status cannot be changed. Blocks that are not locked can still change their protection status, and pro- gram or erase accordingly; Table 16. Protection States (1) Note: 1. All blocks are protected at power-up, so the default configuration is 001 or 101 according to WP status. 2. Current state and Next state gives the protection status of a block. The protection status is defined by the write protect pin and by ADQ1 (= 1 for a locked block) and ADQ0 (= 1 for a protected block) as read in the Autoselect instruction with A1 = VIH and A0 = VIL. 3. Next state is the protection status of a block after a Protect or Unprotect or Lock command has been issued or after WP has changed its logic value. 4. A WP transition to VIH on a locked block will restore the previous ADQ0 value, giving a 111 or 110. Current State (2) (WP, ADQ1, ADQ0) Program/Erase Allowed Next State After Event (3) Protect Unprotect Lock WP transition 100 yes 101 100 111 000 101 no 101 100 111 001 110 yes 111 110 111 011 111 no 111 110 111 011 000 yes 001 000 011 100 001 no 001 000 011 101 011 no 011 011 011 111 or 110 (4) |
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