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PD57002S-E Datasheet(PDF) 4 Page - STMicroelectronics

Part # PD57002S-E
Description  RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PDF  23 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD57002S-E Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical Characteristics
PD57002-E, PD57002S-E
4/23
2
Electrical Characteristics
TCASE = +25
oC
2.1
Static
2.2
Dynamic
Table 3.
Static
Symbol
Test conditions
Min
Typ
Max
Unit
IDSS
VGS = 0V
VDS = 28V
1
µA
IGSS
VGS = 20V
VDS = 0V
1
µA
VGS(Q)
VDS = 28V
ID = 10mA
2.0
5.0
V
VDS(ON)
VGS = 10V
ID = 125mA
0.7
0.9
V
GFS
VDS = 10V
ID = 200mA
--
mho
CISS
VGS = 0V
VDS = 28V
f = 1MHz
7.1
pF
COSS
VGS = 0V
VDS = 28V
f = 1MHz
5.8
pF
CRSS
VGS = 0V
VDS = 28V
f = 1MHz
0.1
pF
Table 4.
Dynamic
Symbol
Test conditions
Min
Typ
Max
Unit
P1dB
VDD = 28V,
IDQ = 10mA
f = 960MHz
2
W
GP
VDD = 28V,
IDQ = 10mA, POUT = 2W,
f = 960MHz
15
dB
hD
VDD = 28V,
IDQ = 10mA, POUT = 2W,
f = 960MHz
45
%
Load
mismatch
VDD = 28V,
IDQ = 10mA, POUT = 2W,
f = 960MHz
All phase angles
10:1
VSWR



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